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Commit 105bffcd authored by Andrey Filippov's avatar Andrey Filippov
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added Micron DDR3 model, modified to work with Icarus, modified Icarus to avoid assertion

parent 3d67d687
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ddr3/1024Mb_ddr3_parameters.vh 0 → 100755
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/****************************************************************************************
*
* Disclaimer This software code and all associated documentation, comments or other
* of Warranty: information (collectively "Software") is provided "AS IS" without
* warranty of any kind. MICRON TECHNOLOGY, INC. ("MTI") EXPRESSLY
* DISCLAIMS ALL WARRANTIES EXPRESS OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO, NONINFRINGEMENT OF THIRD PARTY RIGHTS, AND ANY IMPLIED WARRANTIES
* OF MERCHANTABILITY OR FITNESS FOR ANY PARTICULAR PURPOSE. MTI DOES NOT
* WARRANT THAT THE SOFTWARE WILL MEET YOUR REQUIREMENTS, OR THAT THE
* OPERATION OF THE SOFTWARE WILL BE UNINTERRUPTED OR ERROR-FREE.
* FURTHERMORE, MTI DOES NOT MAKE ANY REPRESENTATIONS REGARDING THE USE OR
* THE RESULTS OF THE USE OF THE SOFTWARE IN TERMS OF ITS CORRECTNESS,
* ACCURACY, RELIABILITY, OR OTHERWISE. THE ENTIRE RISK ARISING OUT OF USE
* OR PERFORMANCE OF THE SOFTWARE REMAINS WITH YOU. IN NO EVENT SHALL MTI,
* ITS AFFILIATED COMPANIES OR THEIR SUPPLIERS BE LIABLE FOR ANY DIRECT,
* INDIRECT, CONSEQUENTIAL, INCIDENTAL, OR SPECIAL DAMAGES (INCLUDING,
* WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS INTERRUPTION,
* OR LOSS OF INFORMATION) ARISING OUT OF YOUR USE OF OR INABILITY TO USE
* THE SOFTWARE, EVEN IF MTI HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH
* DAMAGES. Because some jurisdictions prohibit the exclusion or
* limitation of liability for consequential or incidental damages, the
* above limitation may not apply to you.
*
* Copyright 2003 Micron Technology, Inc. All rights reserved.
*
****************************************************************************************/
// Timing parameters based on 1Gb_DDR3_SDRAM.cdf - Rev. L 09/12 EN
// SYMBOL UNITS DESCRIPTION
// ------ ----- -----------
`ifdef sg093 // sg093 is equivalent to the JEDEC DDR3-2133 (14-14-14) speed bin
parameter TCK_MIN = 938; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 50; // tJIT(per) ps Period JItter
parameter TJIT_CC = 100; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 74; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 87; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 97; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 105; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 111; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 116; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 121; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 125; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 128; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 132; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 134; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 5; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 20; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 70; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.27; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.18; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.18; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 180; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 280; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 470; // tIPW ps Control and Address input Pulse Width
parameter TIS = 35; // tIS ps Input Setup Time
parameter TIH = 75; // tIH ps Input Hold Time
parameter TRAS_MIN = 33000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 46130; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13090; // tRCD ps Active to Read/Write command time
parameter TRP = 13090; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5000; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 180; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 122; // tWLS ps Setup time for tDQS flop
parameter TWLH = 122; // tWLH ps Hold time of tDQS flop
parameter TWLO = 7500; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13090; // TAA ps Internal READ command to first data
parameter CL_TIME = 13090; // CL ps Minimum CAS Latency
`elsif sg107 // sg107 is equivalent to the JEDEC DDR3-1866 (13-13-13) speed bin
parameter TCK_MIN = 1071; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 60; // tJIT(per) ps Period JItter
parameter TJIT_CC = 120; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 88; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 105; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 117; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 126; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 133; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 139; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 145; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 150; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 154; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 158; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 161; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 10; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 20; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 80; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.27; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.18; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.18; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 200; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 320; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 535; // tIPW ps Control and Address input Pulse Width
parameter TIS = 50; // tIS ps Input Setup Time
parameter TIH = 100; // tIH ps Input Hold Time
parameter TRAS_MIN = 34000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 48910; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13910; // tRCD ps Active to Read/Write command time
parameter TRP = 13910; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5000; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 200; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 140; // tWLS ps Setup time for tDQS flop
parameter TWLH = 140; // tWLH ps Hold time of tDQS flop
parameter TWLO = 7500; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13910; // TAA ps Internal READ command to first data
parameter CL_TIME = 13910; // CL ps Minimum CAS Latency
`elsif sg125 // sg125 is equivalent to the JEDEC DDR3-1600 (11-11-11) speed bin
parameter TCK_MIN = 1250; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 70; // tJIT(per) ps Period JItter
parameter TJIT_CC = 140; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 103; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 122; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 136; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 147; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 155; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 163; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 169; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 175; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 180; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 184; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 188; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 10; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 45; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 100; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.27; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.18; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.18; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 225; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 360; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 560; // tIPW ps Control and Address input Pulse Width
parameter TIS = 170; // tIS ps Input Setup Time
parameter TIH = 120; // tIH ps Input Hold Time
parameter TRAS_MIN = 35000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 48750; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13750; // tRCD ps Active to Read/Write command time
parameter TRP = 13750; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5000; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 250; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 165; // tWLS ps Setup time for tDQS flop
parameter TWLH = 165; // tWLH ps Hold time of tDQS flop
parameter TWLO = 7500; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13750; // TAA ps Internal READ command to first data
parameter CL_TIME = 13750; // CL ps Minimum CAS Latency
`elsif sg15E // sg15E is equivalent to the JEDEC DDR3-1333H (9-9-9) speed bin
parameter TCK_MIN = 1500; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 80; // tJIT(per) ps Period JItter
parameter TJIT_CC = 160; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 118; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 140; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 155; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 168; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 177; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 186; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 193; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 200; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 205; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 210; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 215; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 30; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 65; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 125; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 255; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 400; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 620; // tIPW ps Control and Address input Pulse Width
parameter TIS = 190; // tIS ps Input Setup Time
parameter TIH = 140; // tIH ps Input Hold Time
parameter TRAS_MIN = 36000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 49500; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13500; // tRCD ps Active to Read/Write command time
parameter TRP = 13500; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5625; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 250; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 195; // tWLS ps Setup time for tDQS flop
parameter TWLH = 195; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13500; // TAA ps Internal READ command to first data
parameter CL_TIME = 13500; // CL ps Minimum CAS Latency
`elsif sg15 // sg15 is equivalent to the JEDEC DDR3-1333J (10-10-10) speed bin
parameter TCK_MIN = 1500; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 80; // tJIT(per) ps Period JItter
parameter TJIT_CC = 160; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 118; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 140; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 155; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 168; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 177; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 186; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 193; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 200; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 205; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 210; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 215; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 30; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 65; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 125; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 255; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 400; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 620; // tIPW ps Control and Address input Pulse Width
parameter TIS = 190; // tIS ps Input Setup Time
parameter TIH = 140; // tIH ps Input Hold Time
parameter TRAS_MIN = 36000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 51000; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 15000; // tRCD ps Active to Read/Write command time
parameter TRP = 15000; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5625; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 250; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 195; // tWLS ps Setup time for tDQS flop
parameter TWLH = 195; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 15000; // TAA ps Internal READ command to first data
parameter CL_TIME = 15000; // CL ps Minimum CAS Latency
`elsif sg187E // sg187E is equivalent to the JEDEC DDR3-1066F (7-7-7) speed bin
parameter TCK_MIN = 1875; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 90; // tJIT(per) ps Period JItter
parameter TJIT_CC = 180; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 132; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 157; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 175; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 188; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 200; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 209; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 217; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 224; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 231; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 237; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 242; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 75; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 100; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 150; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 300; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.38; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.38; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 490; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 780; // tIPW ps Control and Address input Pulse Width
parameter TIS = 275; // tIS ps Input Setup Time
parameter TIH = 200; // tIH ps Input Hold Time
parameter TRAS_MIN = 37500; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 50625; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13125; // tRCD ps Active to Read/Write command time
parameter TRP = 13125; // tRP ps Precharge command period
parameter TXP = 7500; // tXP ps Exit power down to a valid command
parameter TCKE = 5625; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 300; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 245; // tWLS ps Setup time for tDQS flop
parameter TWLH = 245; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13125; // TAA ps Internal READ command to first data
parameter CL_TIME = 13125; // CL ps Minimum CAS Latency
`elsif sg187 // sg187 is equivalent to the JEDEC DDR3-1066G (8-8-8) speed bin
parameter TCK_MIN = 1875; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 90; // tJIT(per) ps Period JItter
parameter TJIT_CC = 180; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 132; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 157; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 175; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 188; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 200; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 209; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 217; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 224; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 231; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 237; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 242; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 75; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 100; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 150; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 300; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.38; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.38; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 490; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 780; // tIPW ps Control and Address input Pulse Width
parameter TIS = 275; // tIS ps Input Setup Time
parameter TIH = 200; // tIH ps Input Hold Time
parameter TRAS_MIN = 37500; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 52500; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 15000; // tRCD ps Active to Read/Write command time
parameter TRP = 15000; // tRP ps Precharge command period
parameter TXP = 7500; // tXP ps Exit power down to a valid command
parameter TCKE = 5625; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 300; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 245; // tWLS ps Setup time for tDQS flop
parameter TWLH = 245; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 15000; // TAA ps Internal READ command to first data
parameter CL_TIME = 15000; // CL ps Minimum CAS Latency
`elsif sg25E // sg25E is equivalent to the JEDEC DDR3-800E (5-5-5) speed bin
parameter TCK_MIN = 2500; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 100; // tJIT(per) ps Period JItter
parameter TJIT_CC = 200; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 147; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 175; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 194; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 209; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 222; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 232; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 241; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 249; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 257; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 263; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 269; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 125; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 150; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 200; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 400; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.38; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.38; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 600; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 900; // tIPW ps Control and Address input Pulse Width
parameter TIS = 350; // tIS ps Input Setup Time
parameter TIH = 275; // tIH ps Input Hold Time
parameter TRAS_MIN = 37500; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 50000; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 12500; // tRCD ps Active to Read/Write command time
parameter TRP = 12500; // tRP ps Precharge command period
parameter TXP = 7500; // tXP ps Exit power down to a valid command
parameter TCKE = 7500; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 400; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 325; // tWLS ps Setup time for tDQS flop
parameter TWLH = 325; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 12500; // TAA ps Internal READ command to first data
parameter CL_TIME = 12500; // CL ps Minimum CAS Latency
`else
`define sg25 // sg25 is equivalent to the JEDEC DDR3-800 (6-6-6) speed bin
parameter TCK_MIN = 2500; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 100; // tJIT(per) ps Period JItter
parameter TJIT_CC = 200; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 147; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 175; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 194; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 209; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 222; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 232; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 241; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 249; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 257; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 263; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 269; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 125; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 150; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 200; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 400; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.38; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.38; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 600; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 900; // tIPW ps Control and Address input Pulse Width
parameter TIS = 350; // tIS ps Input Setup Time
parameter TIH = 275; // tIH ps Input Hold Time
parameter TRAS_MIN = 37500; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 52500; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 15000; // tRCD ps Active to Read/Write command time
parameter TRP = 15000; // tRP ps Precharge command period
parameter TXP = 7500; // tXP ps Exit power down to a valid command
parameter TCKE = 7500; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 400; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 325; // tWLS ps Setup time for tDQS flop
parameter TWLH = 325; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 15000; // TAA ps Internal READ command to first data
parameter CL_TIME = 15000; // CL ps Minimum CAS Latency
`endif
parameter TDQSCK_DLLDIS = TDQSCK; // tDQSCK ps for DLLDIS mode, timing not guaranteed
`ifdef x16
`ifdef sg093
parameter TRRD = 6000; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 35000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg107
parameter TRRD = 6000; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 35000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg125
parameter TRRD = 7500; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 40000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg15E
parameter TRRD = 7500; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 45000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg15
parameter TRRD = 7500; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 45000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg187E
parameter TRRD = 10000; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 50000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg187
parameter TRRD = 10000; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 50000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg25E
parameter TRRD = 10000; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 50000; // tFAW ps (2KB page size) Four Bank Activate window
`else // sg25
parameter TRRD = 10000; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 50000; // tFAW ps (2KB page size) Four Bank Activate window
`endif
`else // x4, x8
`ifdef sg093
parameter TRRD = 5000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 25000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg107
parameter TRRD = 5000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 25000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg125
parameter TRRD = 6000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 30000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg15E
parameter TRRD = 6000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 30000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg15
parameter TRRD = 6000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 30000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg187E
parameter TRRD = 7500; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 37500; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg187
parameter TRRD = 7500; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 37500; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg25E
parameter TRRD = 10000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 40000; // tFAW ps (1KB page size) Four Bank Activate window
`else // sg25
parameter TRRD = 10000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 40000; // tFAW ps (1KB page size) Four Bank Activate window
`endif
`endif
// Timing Parameters
// Mode Register
parameter CL_MIN = 5; // CL tCK Minimum CAS Latency
parameter CL_MAX = 14; // CL tCK Maximum CAS Latency
parameter AL_MIN = 0; // AL tCK Minimum Additive Latency
parameter AL_MAX = 2; // AL tCK Maximum Additive Latency
parameter WR_MIN = 5; // WR tCK Minimum Write Recovery
parameter WR_MAX = 16; // WR tCK Maximum Write Recovery
parameter BL_MIN = 4; // BL tCK Minimum Burst Length
parameter BL_MAX = 8; // BL tCK Minimum Burst Length
parameter CWL_MIN = 5; // CWL tCK Minimum CAS Write Latency
parameter CWL_MAX = 10; // CWL tCK Maximum CAS Write Latency
// Clock
parameter TCK_MAX = 3300; // tCK ps Maximum Clock Cycle Time
parameter TCH_AVG_MIN = 0.47; // tCH tCK Minimum Clock High-Level Pulse Width
parameter TCL_AVG_MIN = 0.47; // tCL tCK Minimum Clock Low-Level Pulse Width
parameter TCH_AVG_MAX = 0.53; // tCH tCK Maximum Clock High-Level Pulse Width
parameter TCL_AVG_MAX = 0.53; // tCL tCK Maximum Clock Low-Level Pulse Width
parameter TCH_ABS_MIN = 0.43; // tCH tCK Minimum Clock High-Level Pulse Width
parameter TCL_ABS_MIN = 0.43; // tCL tCK Maximum Clock Low-Level Pulse Width
parameter TCKE_TCK = 3; // tCKE tCK CKE minimum high or low pulse width
parameter TAA_MAX = 20000; // TAA ps Internal READ command to first data
// Data OUT
parameter TQH = 0.38; // tQH ps DQ output hold time from DQS, DQS#
// Data Strobe OUT
parameter TRPRE = 0.90; // tRPRE tCK DQS Read Preamble
parameter TRPST = 0.30; // tRPST tCK DQS Read Postamble
// Data Strobe IN
parameter TDQSH = 0.45; // tDQSH tCK DQS input High Pulse Width
parameter TDQSL = 0.45; // tDQSL tCK DQS input Low Pulse Width
parameter TWPRE = 0.90; // tWPRE tCK DQS Write Preamble
parameter TWPST = 0.30; // tWPST tCK DQS Write Postamble
// Command and Address
integer TZQCS = max( 64, ceil( 80000/TCK_MIN)); // tZQCS tCK ZQ Cal (Short) time
integer TZQINIT = max(512, ceil(640000/TCK_MIN)); // tZQinit tCK ZQ Cal (Long) time
integer TZQOPER = max(256, ceil(320000/TCK_MIN)); // tZQoper tCK ZQ Cal (Long) time
parameter TCCD = 4; // tCCD tCK Cas to Cas command delay
parameter TCCD_DG = 2; // tCCD_DG tCK Cas to Cas command delay to different group
parameter TRAS_MAX = 60e9; // tRAS ps Maximum Active to Precharge command time
parameter TWR = 15000; // tWR ps Write recovery time
parameter TMRD = 4; // tMRD tCK Load Mode Register command cycle time
parameter TMOD = 15000; // tMOD ps LOAD MODE to non-LOAD MODE command cycle time
parameter TMOD_TCK = 12; // tMOD tCK LOAD MODE to non-LOAD MODE command cycle time
parameter TRRD_TCK = 4; // tRRD tCK Active bank a to Active bank b command time
parameter TRRD_DG = 3000; // tRRD_DG ps Active bank a to Active bank b command time to different group
parameter TRRD_DG_TCK = 2; // tRRD_DG tCK Active bank a to Active bank b command time to different group
parameter TRTP = 7500; // tRTP ps Read to Precharge command delay
parameter TRTP_TCK = 4; // tRTP tCK Read to Precharge command delay
parameter TWTR = 7500; // tWTR ps Write to Read command delay
parameter TWTR_DG = 3750; // tWTR_DG ps Write to Read command delay to different group
parameter TWTR_TCK = 4; // tWTR tCK Write to Read command delay
parameter TWTR_DG_TCK = 2; // tWTR_DG tCK Write to Read command delay to different group
parameter TDLLK = 512; // tDLLK tCK DLL locking time
// Refresh - 1Gb
parameter TRFC_MIN = 110000; // tRFC ps Refresh to Refresh Command interval minimum value
parameter TRFC_MAX =70200000; // tRFC ps Refresh to Refresh Command Interval maximum value
// Power Down
parameter TXP_TCK = 3; // tXP tCK Exit power down to a valid command
parameter TXPDLL = 24000; // tXPDLL ps Exit precharge power down to READ or WRITE command (DLL-off mode)
parameter TXPDLL_TCK = 10; // tXPDLL tCK Exit precharge power down to READ or WRITE command (DLL-off mode)
parameter TACTPDEN = 1; // tACTPDEN tCK Timing of last ACT command to power down entry
parameter TPRPDEN = 1; // tPREPDEN tCK Timing of last PRE command to power down entry
parameter TREFPDEN = 1; // tARPDEN tCK Timing of last REFRESH command to power down entry
parameter TCPDED = 1; // tCPDED tCK Command pass disable/enable delay
parameter TPD_MAX =TRFC_MAX; // tPD ps Power-down entry-to-exit timing
parameter TXPR = 120000; // tXPR ps Exit Reset from CKE assertion to a valid command
parameter TXPR_TCK = 5; // tXPR tCK Exit Reset from CKE assertion to a valid command
// Self Refresh
parameter TXS = 120000; // tXS ps Exit self refesh to a non-read or write command
parameter TXS_TCK = 5; // tXS tCK Exit self refesh to a non-read or write command
parameter TXSDLL = TDLLK; // tXSRD tCK Exit self refresh to a read or write command
parameter TISXR = TIS; // tISXR ps CKE setup time during self refresh exit.
parameter TCKSRE = 10000; // tCKSRE ps Valid Clock requirement after self refresh entry (SRE)
parameter TCKSRE_TCK = 5; // tCKSRE tCK Valid Clock requirement after self refresh entry (SRE)
parameter TCKSRX = 10000; // tCKSRX ps Valid Clock requirement prior to self refresh exit (SRX)
parameter TCKSRX_TCK = 5; // tCKSRX tCK Valid Clock requirement prior to self refresh exit (SRX)
parameter TCKESR_TCK = 4; // tCKESR tCK Minimum CKE low width for Self Refresh entry to exit timing
// ODT
parameter TAOF = 0.7; // tAOF tCK RTT turn-off from ODTLoff reference
parameter TAONPD = 8500; // tAONPD ps Asynchronous RTT turn-on delay (Power-Down with DLL frozen)
parameter TAOFPD = 8500; // tAONPD ps Asynchronous RTT turn-off delay (Power-Down with DLL frozen)
parameter ODTH4 = 4; // ODTH4 tCK ODT minimum HIGH time after ODT assertion or write (BL4)
parameter ODTH8 = 6; // ODTH8 tCK ODT minimum HIGH time after write (BL8)
parameter TADC = 0.7; // tADC tCK RTT dynamic change skew
// Write Levelization
parameter TWLMRD = 40; // tWLMRD tCK First DQS pulse rising edge after tDQSS margining mode is programmed
parameter TWLDQSEN = 25; // tWLDQSEN tCK DQS/DQS delay after tDQSS margining mode is programmed
parameter TWLOE = 2000; // tWLOE ps Write levelization output error
// Size Parameters based on Part Width
`ifdef x4
parameter DM_BITS = 1; // Set this parameter to control how many Data Mask bits are used
parameter ADDR_BITS = 14; // MAX Address Bits
parameter ROW_BITS = 14; // Set this parameter to control how many Address bits are used
parameter COL_BITS = 11; // Set this parameter to control how many Column bits are used
parameter DQ_BITS = 4; // Set this parameter to control how many Data bits are used **Same as part bit width**
parameter DQS_BITS = 1; // Set this parameter to control how many Dqs bits are used
`elsif x8
parameter DM_BITS = 1; // Set this parameter to control how many Data Mask bits are used
parameter ADDR_BITS = 14; // MAX Address Bits
parameter ROW_BITS = 14; // Set this parameter to control how many Address bits are used
parameter COL_BITS = 10; // Set this parameter to control how many Column bits are used
parameter DQ_BITS = 8; // Set this parameter to control how many Data bits are used **Same as part bit width**
parameter DQS_BITS = 1; // Set this parameter to control how many Dqs bits are used
`else
`define x16
parameter DM_BITS = 2; // Set this parameter to control how many Data Mask bits are used
parameter ADDR_BITS = 13; // MAX Address Bits
parameter ROW_BITS = 13; // Set this parameter to control how many Address bits are used
parameter COL_BITS = 10; // Set this parameter to control how many Column bits are used
parameter DQ_BITS = 16; // Set this parameter to control how many Data bits are used **Same as part bit width**
parameter DQS_BITS = 2; // Set this parameter to control how many Dqs bits are used
`endif
// Size Parameters
parameter BA_BITS = 3; // Set this parmaeter to control how many Bank Address bits are used
parameter MEM_BITS = 10; // Set this parameter to control how many write data bursts can be stored in memory. The default is 2^10=1024.
parameter AP = 10; // the address bit that controls auto-precharge and precharge-all
parameter BC = 12; // the address bit that controls burst chop
parameter BL_BITS = 3; // the number of bits required to count to BL_MAX
parameter BO_BITS = 2; // the number of Burst Order Bits
`ifdef QUAD_RANK
parameter CS_BITS = 4; // Number of Chip Select Bits
parameter RANKS = 4; // Number of Chip Selects
`elsif DUAL_RANK
parameter CS_BITS = 2; // Number of Chip Select Bits
parameter RANKS = 2; // Number of Chip Selects
`else
parameter CS_BITS = 1; // Number of Chip Select Bits
parameter RANKS = 1; // Number of Chip Selects
`endif
// Simulation parameters
parameter RZQ = 240; // termination resistance
parameter PRE_DEF_PAT = 8'hAA; // value returned during mpr pre-defined pattern readout
parameter STOP_ON_ERROR = 1; // If set to 1, the model will halt on command sequence/major errors
parameter DEBUG = 1; // Turn on Debug messages
parameter BUS_DELAY = 0; // delay in nanoseconds
parameter RANDOM_OUT_DELAY = 0; // If set to 1, the model will put a random amount of delay on DQ/DQS during reads
parameter RANDOM_SEED = 31913; //seed value for random generator.
parameter RDQSEN_PRE = 2; // DQS driving time prior to first read strobe
parameter RDQSEN_PST = 1; // DQS driving time after last read strobe
parameter RDQS_PRE = 2; // DQS low time prior to first read strobe
parameter RDQS_PST = 1; // DQS low time after last read strobe
parameter RDQEN_PRE = 0; // DQ/DM driving time prior to first read data
parameter RDQEN_PST = 0; // DQ/DM driving time after last read data
parameter WDQS_PRE = 2; // DQS half clock periods prior to first write strobe
parameter WDQS_PST = 1; // DQS half clock periods after last write strobe
// check for legal cas latency based on the cas write latency
function valid_cl;
input [3:0] cl;
input [3:0] cwl;
case ({cwl, cl})
`ifdef sg093
{4'd5 , 4'd5 },
{4'd5 , 4'd6 },
{4'd6 , 4'd7 },
{4'd6 , 4'd8 },
{4'd7 , 4'd9 },
{4'd7 , 4'd10},
{4'd8 , 4'd11},
{4'd9 , 4'd13},
{4'd10, 4'd14}: valid_cl = 1;
`elsif sg107
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 },
{4'd7, 4'd9 },
{4'd7, 4'd10},
{4'd8, 4'd11},
{4'd9, 4'd13}: valid_cl = 1;
`elsif sg125
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 },
{4'd7, 4'd9 },
{4'd7, 4'd10},
{4'd8, 4'd11}: valid_cl = 1;
`elsif sg15E
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 },
{4'd7, 4'd9 },
{4'd7, 4'd10}: valid_cl = 1;
`elsif sg15
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd8 },
{4'd7, 4'd10}: valid_cl = 1;
`elsif sg187E
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 }: valid_cl = 1;
`elsif sg187
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd8 }: valid_cl = 1;
`elsif sg25E
{4'd5, 4'd5 },
{4'd5, 4'd6 }: valid_cl = 1;
`elsif sg25
{4'd5, 4'd5 },
{4'd5, 4'd6 }: valid_cl = 1;
`endif
default : valid_cl = 0;
endcase
endfunction
// find the minimum valid cas write latency
function [3:0] min_cwl;
input period;
real period;
min_cwl = (period >= 2500.0) ? 5:
(period >= 1875.0) ? 6:
(period >= 1500.0) ? 7:
(period >= 1250.0) ? 8:
(period >= 1071.0) ? 9:
10; // (period >= 938)
endfunction
// find the minimum valid cas latency
function [3:0] min_cl;
input period;
real period;
reg [3:0] cwl;
reg [3:0] cl;
begin
cwl = min_cwl(period);
for (cl=CL_MAX; cl>=CL_MIN; cl=cl-1) begin
if (valid_cl(cl, cwl)) begin
min_cl = cl;
end
end
end
endfunction
ddr3/2048Mb_ddr3_parameters.vh 0 → 100755
View file @ 105bffcd
/****************************************************************************************
*
* Disclaimer This software code and all associated documentation, comments or other
* of Warranty: information (collectively "Software") is provided "AS IS" without
* warranty of any kind. MICRON TECHNOLOGY, INC. ("MTI") EXPRESSLY
* DISCLAIMS ALL WARRANTIES EXPRESS OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO, NONINFRINGEMENT OF THIRD PARTY RIGHTS, AND ANY IMPLIED WARRANTIES
* OF MERCHANTABILITY OR FITNESS FOR ANY PARTICULAR PURPOSE. MTI DOES NOT
* WARRANT THAT THE SOFTWARE WILL MEET YOUR REQUIREMENTS, OR THAT THE
* OPERATION OF THE SOFTWARE WILL BE UNINTERRUPTED OR ERROR-FREE.
* FURTHERMORE, MTI DOES NOT MAKE ANY REPRESENTATIONS REGARDING THE USE OR
* THE RESULTS OF THE USE OF THE SOFTWARE IN TERMS OF ITS CORRECTNESS,
* ACCURACY, RELIABILITY, OR OTHERWISE. THE ENTIRE RISK ARISING OUT OF USE
* OR PERFORMANCE OF THE SOFTWARE REMAINS WITH YOU. IN NO EVENT SHALL MTI,
* ITS AFFILIATED COMPANIES OR THEIR SUPPLIERS BE LIABLE FOR ANY DIRECT,
* INDIRECT, CONSEQUENTIAL, INCIDENTAL, OR SPECIAL DAMAGES (INCLUDING,
* WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS INTERRUPTION,
* OR LOSS OF INFORMATION) ARISING OUT OF YOUR USE OF OR INABILITY TO USE
* THE SOFTWARE, EVEN IF MTI HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH
* DAMAGES. Because some jurisdictions prohibit the exclusion or
* limitation of liability for consequential or incidental damages, the
* above limitation may not apply to you.
*
* Copyright 2003 Micron Technology, Inc. All rights reserved.
*
****************************************************************************************/
// Timing parameters based on 2Gb_DDR3_SDRAM.pdf - Rev. P 2/12 EN
// SYMBOL UNITS DESCRIPTION
// ------ ----- -----------
`ifdef sg093 // sg093 is equivalent to the JEDEC DDR3-2133 (14-14-14) speed bin
parameter TCK_MIN = 938; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 50; // tJIT(per) ps Period JItter
parameter TJIT_CC = 100; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 74; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 87; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 97; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 105; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 111; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 116; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 121; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 125; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 128; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 132; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 134; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 5; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 20; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 70; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.27; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.18; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.18; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 180; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 280; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 470; // tIPW ps Control and Address input Pulse Width
parameter TIS = 35; // tIS ps Input Setup Time
parameter TIH = 75; // tIH ps Input Hold Time
parameter TRAS_MIN = 33000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 46130; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13090; // tRCD ps Active to Read/Write command time
parameter TRP = 13090; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5000; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 180; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 122; // tWLS ps Setup time for tDQS flop
parameter TWLH = 122; // tWLH ps Hold time of tDQS flop
parameter TWLO = 7500; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13090; // TAA ps Internal READ command to first data
parameter CL_TIME = 13090; // CL ps Minimum CAS Latency
`elsif sg107 // sg107 is equivalent to the JEDEC DDR3-1866 (13-13-13) speed bin
parameter TCK_MIN = 1071; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 60; // tJIT(per) ps Period JItter
parameter TJIT_CC = 120; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 88; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 105; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 117; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 126; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 133; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 139; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 145; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 150; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 154; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 158; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 161; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 10; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 20; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 80; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.27; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.18; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.18; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 200; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 320; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 535; // tIPW ps Control and Address input Pulse Width
parameter TIS = 50; // tIS ps Input Setup Time
parameter TIH = 100; // tIH ps Input Hold Time
parameter TRAS_MIN = 34000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 48910; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13910; // tRCD ps Active to Read/Write command time
parameter TRP = 13910; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5000; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 200; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 140; // tWLS ps Setup time for tDQS flop
parameter TWLH = 140; // tWLH ps Hold time of tDQS flop
parameter TWLO = 7500; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13910; // TAA ps Internal READ command to first data
parameter CL_TIME = 13910; // CL ps Minimum CAS Latency
`elsif sg125 // sg125 is equivalent to the JEDEC DDR3-1600 (11-11-11) speed bin
parameter TCK_MIN = 1250; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 70; // tJIT(per) ps Period JItter
parameter TJIT_CC = 140; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 103; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 122; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 136; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 147; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 155; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 163; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 169; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 175; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 180; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 184; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 188; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 10; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 45; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 100; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.27; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.18; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.18; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 225; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 360; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 560; // tIPW ps Control and Address input Pulse Width
parameter TIS = 170; // tIS ps Input Setup Time
parameter TIH = 120; // tIH ps Input Hold Time
parameter TRAS_MIN = 35000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 48750; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13750; // tRCD ps Active to Read/Write command time
parameter TRP = 13750; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5000; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 250; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 165; // tWLS ps Setup time for tDQS flop
parameter TWLH = 165; // tWLH ps Hold time of tDQS flop
parameter TWLO = 7500; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13750; // TAA ps Internal READ command to first data
parameter CL_TIME = 13750; // CL ps Minimum CAS Latency
`elsif sg15E // sg15E is equivalent to the JEDEC DDR3-1333H (9-9-9) speed bin
parameter TCK_MIN = 1500; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 80; // tJIT(per) ps Period JItter
parameter TJIT_CC = 160; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 118; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 140; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 155; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 168; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 177; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 186; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 193; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 200; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 205; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 210; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 215; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 30; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 65; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 125; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 255; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 400; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 620; // tIPW ps Control and Address input Pulse Width
parameter TIS = 190; // tIS ps Input Setup Time
parameter TIH = 140; // tIH ps Input Hold Time
parameter TRAS_MIN = 36000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 49500; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13500; // tRCD ps Active to Read/Write command time
parameter TRP = 13500; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5625; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 250; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 195; // tWLS ps Setup time for tDQS flop
parameter TWLH = 195; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13500; // TAA ps Internal READ command to first data
parameter CL_TIME = 13500; // CL ps Minimum CAS Latency
`elsif sg15 // sg15 is equivalent to the JEDEC DDR3-1333J (10-10-10) speed bin
parameter TCK_MIN = 1500; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 80; // tJIT(per) ps Period JItter
parameter TJIT_CC = 160; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 118; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 140; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 155; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 168; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 177; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 186; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 193; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 200; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 205; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 210; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 215; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 30; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 65; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 125; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 255; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 400; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 620; // tIPW ps Control and Address input Pulse Width
parameter TIS = 190; // tIS ps Input Setup Time
parameter TIH = 140; // tIH ps Input Hold Time
parameter TRAS_MIN = 36000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 51000; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 15000; // tRCD ps Active to Read/Write command time
parameter TRP = 15000; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5625; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 250; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 195; // tWLS ps Setup time for tDQS flop
parameter TWLH = 195; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 15000; // TAA ps Internal READ command to first data
parameter CL_TIME = 15000; // CL ps Minimum CAS Latency
`elsif sg187E // sg187E is equivalent to the JEDEC DDR3-1066F (7-7-7) speed bin
parameter TCK_MIN = 1875; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 90; // tJIT(per) ps Period JItter
parameter TJIT_CC = 180; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 132; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 157; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 175; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 188; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 200; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 209; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 217; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 224; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 231; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 237; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 242; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 75; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 100; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 150; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 300; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.38; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.38; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 490; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 780; // tIPW ps Control and Address input Pulse Width
parameter TIS = 275; // tIS ps Input Setup Time
parameter TIH = 200; // tIH ps Input Hold Time
parameter TRAS_MIN = 37500; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 50625; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13125; // tRCD ps Active to Read/Write command time
parameter TRP = 13125; // tRP ps Precharge command period
parameter TXP = 7500; // tXP ps Exit power down to a valid command
parameter TCKE = 5625; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 300; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 245; // tWLS ps Setup time for tDQS flop
parameter TWLH = 245; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13125; // TAA ps Internal READ command to first data
parameter CL_TIME = 13125; // CL ps Minimum CAS Latency
`elsif sg187 // sg187 is equivalent to the JEDEC DDR3-1066G (8-8-8) speed bin
parameter TCK_MIN = 1875; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 90; // tJIT(per) ps Period JItter
parameter TJIT_CC = 180; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 132; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 157; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 175; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 188; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 200; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 209; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 217; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 224; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 231; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 237; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 242; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 75; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 100; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 150; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 300; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.38; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.38; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 490; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 780; // tIPW ps Control and Address input Pulse Width
parameter TIS = 275; // tIS ps Input Setup Time
parameter TIH = 200; // tIH ps Input Hold Time
parameter TRAS_MIN = 37500; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 52500; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 15000; // tRCD ps Active to Read/Write command time
parameter TRP = 15000; // tRP ps Precharge command period
parameter TXP = 7500; // tXP ps Exit power down to a valid command
parameter TCKE = 5625; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 300; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 245; // tWLS ps Setup time for tDQS flop
parameter TWLH = 245; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 15000; // TAA ps Internal READ command to first data
parameter CL_TIME = 15000; // CL ps Minimum CAS Latency
`elsif sg25E // sg25E is equivalent to the JEDEC DDR3-800D (5-5-5) speed bin
parameter TCK_MIN = 2500; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 100; // tJIT(per) ps Period JItter
parameter TJIT_CC = 200; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 147; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 175; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 194; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 209; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 222; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 232; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 241; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 249; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 257; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 263; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 269; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 125; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 150; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 200; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 400; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.38; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.38; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 600; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 900; // tIPW ps Control and Address input Pulse Width
parameter TIS = 350; // tIS ps Input Setup Time
parameter TIH = 275; // tIH ps Input Hold Time
parameter TRAS_MIN = 37500; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 50000; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 12500; // tRCD ps Active to Read/Write command time
parameter TRP = 12500; // tRP ps Precharge command period
parameter TXP = 7500; // tXP ps Exit power down to a valid command
parameter TCKE = 7500; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 400; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 325; // tWLS ps Setup time for tDQS flop
parameter TWLH = 325; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 12500; // TAA ps Internal READ command to first data
parameter CL_TIME = 12500; // CL ps Minimum CAS Latency
`else
`define sg25 // sg25 is equivalent to the JEDEC DDR3-800E (6-6-6) speed bin
parameter TCK_MIN = 2500; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 100; // tJIT(per) ps Period JItter
parameter TJIT_CC = 200; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 147; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 175; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 194; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 209; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 222; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 232; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 241; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 249; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 257; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 263; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 269; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 125; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 150; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 200; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 400; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.38; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.38; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 600; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 900; // tIPW ps Control and Address input Pulse Width
parameter TIS = 350; // tIS ps Input Setup Time
parameter TIH = 275; // tIH ps Input Hold Time
parameter TRAS_MIN = 37500; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 52500; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 15000; // tRCD ps Active to Read/Write command time
parameter TRP = 15000; // tRP ps Precharge command period
parameter TXP = 7500; // tXP ps Exit power down to a valid command
parameter TCKE = 7500; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 400; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 325; // tWLS ps Setup time for tDQS flop
parameter TWLH = 325; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 15000; // TAA ps Internal READ command to first data
parameter CL_TIME = 15000; // CL ps Minimum CAS Latency
`endif
parameter TDQSCK_DLLDIS = TDQSCK; // tDQSCK ps for DLLDIS mode, timing not guaranteed
`ifdef x16
`ifdef sg093
parameter TRRD = 6000; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 35000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg107
parameter TRRD = 6000; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 35000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg125
parameter TRRD = 7500; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 40000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg15E
parameter TRRD = 7500; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 45000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg15
parameter TRRD = 7500; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 45000; // tFAW ps (2KB page size) Four Bank Activate window
`else // sg187E, sg187, sg25, sg25E
parameter TRRD = 10000; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 50000; // tFAW ps (2KB page size) Four Bank Activate window
`endif
`else // x4, x8
`ifdef sg093
parameter TRRD = 5000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 25000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg107
parameter TRRD = 5000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 25000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg125
parameter TRRD = 6000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 30000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg15E
parameter TRRD = 6000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 30000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg15
parameter TRRD = 6000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 30000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg187E
parameter TRRD = 7500; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 37500; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg187
parameter TRRD = 7500; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 37500; // tFAW ps (1KB page size) Four Bank Activate window
`else // sg25, sg25E
parameter TRRD = 10000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 40000; // tFAW ps (1KB page size) Four Bank Activate window
`endif
`endif
// Timing Parameters
// Mode Register
parameter CL_MIN = 5; // CL tCK Minimum CAS Latency
parameter CL_MAX = 14; // CL tCK Maximum CAS Latency
parameter AL_MIN = 0; // AL tCK Minimum Additive Latency
parameter AL_MAX = 2; // AL tCK Maximum Additive Latency
parameter WR_MIN = 5; // WR tCK Minimum Write Recovery
parameter WR_MAX = 16; // WR tCK Maximum Write Recovery
parameter BL_MIN = 4; // BL tCK Minimum Burst Length
parameter BL_MAX = 8; // BL tCK Minimum Burst Length
parameter CWL_MIN = 5; // CWL tCK Minimum CAS Write Latency
parameter CWL_MAX = 10; // CWL tCK Maximum CAS Write Latency
// Clock
parameter TCK_MAX = 3300; // tCK ps Maximum Clock Cycle Time
parameter TCH_AVG_MIN = 0.47; // tCH tCK Minimum Clock High-Level Pulse Width
parameter TCL_AVG_MIN = 0.47; // tCL tCK Minimum Clock Low-Level Pulse Width
parameter TCH_AVG_MAX = 0.53; // tCH tCK Maximum Clock High-Level Pulse Width
parameter TCL_AVG_MAX = 0.53; // tCL tCK Maximum Clock Low-Level Pulse Width
parameter TCH_ABS_MIN = 0.43; // tCH tCK Minimum Clock High-Level Pulse Width
parameter TCL_ABS_MIN = 0.43; // tCL tCK Maximum Clock Low-Level Pulse Width
parameter TCKE_TCK = 3; // tCKE tCK CKE minimum high or low pulse width
parameter TAA_MAX = 20000; // TAA ps Internal READ command to first data
// Data OUT
parameter TQH = 0.38; // tQH ps DQ output hold time from DQS, DQS#
// Data Strobe OUT
parameter TRPRE = 0.90; // tRPRE tCK DQS Read Preamble
parameter TRPST = 0.30; // tRPST tCK DQS Read Postamble
// Data Strobe IN
parameter TDQSH = 0.45; // tDQSH tCK DQS input High Pulse Width
parameter TDQSL = 0.45; // tDQSL tCK DQS input Low Pulse Width
parameter TWPRE = 0.90; // tWPRE tCK DQS Write Preamble
parameter TWPST = 0.30; // tWPST tCK DQS Write Postamble
// Command and Address
integer TZQCS = max( 64, ceil( 80000/TCK_MIN)); // tZQCS tCK ZQ Cal (Short) time
integer TZQINIT = max(512, ceil(640000/TCK_MIN)); // tZQinit tCK ZQ Cal (Long) time
integer TZQOPER = max(256, ceil(320000/TCK_MIN)); // tZQoper tCK ZQ Cal (Long) time
parameter TCCD = 4; // tCCD tCK Cas to Cas command delay
parameter TCCD_DG = 2; // tCCD_DG tCK Cas to Cas command delay to different group
parameter TRAS_MAX = 60e9; // tRAS ps Maximum Active to Precharge command time
parameter TWR = 15000; // tWR ps Write recovery time
parameter TMRD = 4; // tMRD tCK Load Mode Register command cycle time
parameter TMOD = 15000; // tMOD ps LOAD MODE to non-LOAD MODE command cycle time
parameter TMOD_TCK = 12; // tMOD tCK LOAD MODE to non-LOAD MODE command cycle time
parameter TRRD_TCK = 4; // tRRD tCK Active bank a to Active bank b command time
parameter TRRD_DG = 3000; // tRRD_DG ps Active bank a to Active bank b command time to different group
parameter TRRD_DG_TCK = 2; // tRRD_DG tCK Active bank a to Active bank b command time to different group
parameter TRTP = 7500; // tRTP ps Read to Precharge command delay
parameter TRTP_TCK = 4; // tRTP tCK Read to Precharge command delay
parameter TWTR = 7500; // tWTR ps Write to Read command delay
parameter TWTR_DG = 3750; // tWTR_DG ps Write to Read command delay to different group
parameter TWTR_TCK = 4; // tWTR tCK Write to Read command delay
parameter TWTR_DG_TCK = 2; // tWTR_DG tCK Write to Read command delay to different group
parameter TDLLK = 512; // tDLLK tCK DLL locking time
// Refresh - 2Gb
parameter TRFC_MIN = 160000; // tRFC ps Refresh to Refresh Command interval minimum value
parameter TRFC_MAX =70200000; // tRFC ps Refresh to Refresh Command Interval maximum value
// Power Down
parameter TXP_TCK = 3; // tXP tCK Exit power down to a valid command
parameter TXPDLL = 24000; // tXPDLL ps Exit precharge power down to READ or WRITE command (DLL-off mode)
parameter TXPDLL_TCK = 10; // tXPDLL tCK Exit precharge power down to READ or WRITE command (DLL-off mode)
parameter TACTPDEN = 1; // tACTPDEN tCK Timing of last ACT command to power down entry
parameter TPRPDEN = 1; // tPREPDEN tCK Timing of last PRE command to power down entry
parameter TREFPDEN = 1; // tARPDEN tCK Timing of last REFRESH command to power down entry
parameter TCPDED = 1; // tCPDED tCK Command pass disable/enable delay
parameter TPD_MAX =TRFC_MAX; // tPD ps Power-down entry-to-exit timing
parameter TXPR = 170000; // tXPR ps Exit Reset from CKE assertion to a valid command
parameter TXPR_TCK = 5; // tXPR tCK Exit Reset from CKE assertion to a valid command
// Self Refresh
parameter TXS = 170000; // tXS ps Exit self refesh to a non-read or write command
parameter TXS_TCK = 5; // tXS tCK Exit self refesh to a non-read or write command
parameter TXSDLL = TDLLK; // tXSRD tCK Exit self refresh to a read or write command
parameter TISXR = TIS; // tISXR ps CKE setup time during self refresh exit.
parameter TCKSRE = 10000; // tCKSRE ps Valid Clock requirement after self refresh entry (SRE)
parameter TCKSRE_TCK = 5; // tCKSRE tCK Valid Clock requirement after self refresh entry (SRE)
parameter TCKSRX = 10000; // tCKSRX ps Valid Clock requirement prior to self refresh exit (SRX)
parameter TCKSRX_TCK = 5; // tCKSRX tCK Valid Clock requirement prior to self refresh exit (SRX)
parameter TCKESR_TCK = 4; // tCKESR tCK Minimum CKE low width for Self Refresh entry to exit timing
// ODT
parameter TAOF = 0.7; // tAOF tCK RTT turn-off from ODTLoff reference
parameter TAONPD = 8500; // tAONPD ps Asynchronous RTT turn-on delay (Power-Down with DLL frozen)
parameter TAOFPD = 8500; // tAONPD ps Asynchronous RTT turn-off delay (Power-Down with DLL frozen)
parameter ODTH4 = 4; // ODTH4 tCK ODT minimum HIGH time after ODT assertion or write (BL4)
parameter ODTH8 = 6; // ODTH8 tCK ODT minimum HIGH time after write (BL8)
parameter TADC = 0.7; // tADC tCK RTT dynamic change skew
// Write Levelization
parameter TWLMRD = 40; // tWLMRD tCK First DQS pulse rising edge after tDQSS margining mode is programmed
parameter TWLDQSEN = 25; // tWLDQSEN tCK DQS/DQS delay after tDQSS margining mode is programmed
parameter TWLOE = 2000; // tWLOE ps Write levelization output error
// Size Parameters based on Part Width
`ifdef x4
parameter DM_BITS = 1; // Set this parameter to control how many Data Mask bits are used
parameter ADDR_BITS = 15; // MAX Address Bits
parameter ROW_BITS = 15; // Set this parameter to control how many Address bits are used
parameter COL_BITS = 11; // Set this parameter to control how many Column bits are used
parameter DQ_BITS = 4; // Set this parameter to control how many Data bits are used **Same as part bit width**
parameter DQS_BITS = 1; // Set this parameter to control how many Dqs bits are used
`elsif x8
parameter DM_BITS = 1; // Set this parameter to control how many Data Mask bits are used
parameter ADDR_BITS = 15; // MAX Address Bits
parameter ROW_BITS = 15; // Set this parameter to control how many Address bits are used
parameter COL_BITS = 10; // Set this parameter to control how many Column bits are used
parameter DQ_BITS = 8; // Set this parameter to control how many Data bits are used **Same as part bit width**
parameter DQS_BITS = 1; // Set this parameter to control how many Dqs bits are used
`else
`define x16
parameter DM_BITS = 2; // Set this parameter to control how many Data Mask bits are used
parameter ADDR_BITS = 14; // MAX Address Bits
parameter ROW_BITS = 14; // Set this parameter to control how many Address bits are used
parameter COL_BITS = 10; // Set this parameter to control how many Column bits are used
parameter DQ_BITS = 16; // Set this parameter to control how many Data bits are used **Same as part bit width**
parameter DQS_BITS = 2; // Set this parameter to control how many Dqs bits are used
`endif
// Size Parameters
parameter BA_BITS = 3; // Set this parmaeter to control how many Bank Address bits are used
parameter MEM_BITS = 10; // Set this parameter to control how many write data bursts can be stored in memory. The default is 2^10=1024.
parameter AP = 10; // the address bit that controls auto-precharge and precharge-all
parameter BC = 12; // the address bit that controls burst chop
parameter BL_BITS = 3; // the number of bits required to count to BL_MAX
parameter BO_BITS = 2; // the number of Burst Order Bits
`ifdef QUAD_RANK
parameter CS_BITS = 4; // Number of Chip Select Bits
parameter RANKS = 4; // Number of Chip Selects
`elsif DUAL_RANK
parameter CS_BITS = 2; // Number of Chip Select Bits
parameter RANKS = 2; // Number of Chip Selects
`else
parameter CS_BITS = 1; // Number of Chip Select Bits
parameter RANKS = 1; // Number of Chip Selects
`endif
// Simulation parameters
parameter RZQ = 240; // termination resistance
parameter PRE_DEF_PAT = 8'hAA; // value returned during mpr pre-defined pattern readout
parameter STOP_ON_ERROR = 1; // If set to 1, the model will halt on command sequence/major errors
parameter DEBUG = 1; // Turn on Debug messages
parameter BUS_DELAY = 0; // delay in nanoseconds
parameter RANDOM_OUT_DELAY = 0; // If set to 1, the model will put a random amount of delay on DQ/DQS during reads
parameter RANDOM_SEED = 31913; //seed value for random generator.
parameter RDQSEN_PRE = 2; // DQS driving time prior to first read strobe
parameter RDQSEN_PST = 1; // DQS driving time after last read strobe
parameter RDQS_PRE = 2; // DQS low time prior to first read strobe
parameter RDQS_PST = 1; // DQS low time after last read strobe
parameter RDQEN_PRE = 0; // DQ/DM driving time prior to first read data
parameter RDQEN_PST = 0; // DQ/DM driving time after last read data
parameter WDQS_PRE = 2; // DQS half clock periods prior to first write strobe
parameter WDQS_PST = 1; // DQS half clock periods after last write strobe
// check for legal cas latency based on the cas write latency
function valid_cl;
input [3:0] cl;
input [3:0] cwl;
case ({cwl, cl})
`ifdef sg093
{4'd5 , 4'd5 },
{4'd5 , 4'd6 },
{4'd6 , 4'd7 },
{4'd6 , 4'd8 },
{4'd7 , 4'd9 },
{4'd7 , 4'd10},
{4'd8 , 4'd11},
{4'd9 , 4'd13},
{4'd10, 4'd14}: valid_cl = 1;
`elsif sg107
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 },
{4'd7, 4'd9 },
{4'd7, 4'd10},
{4'd8, 4'd11},
{4'd9, 4'd13}: valid_cl = 1;
`elsif sg125
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 },
{4'd7, 4'd9 },
{4'd7, 4'd10},
{4'd8, 4'd11}: valid_cl = 1;
`elsif sg15E
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 },
{4'd7, 4'd9 },
{4'd7, 4'd10}: valid_cl = 1;
`elsif sg15
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd8 },
{4'd7, 4'd10}: valid_cl = 1;
`elsif sg187E
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 }: valid_cl = 1;
`elsif sg187
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd8 }: valid_cl = 1;
`elsif sg25E
{4'd5, 4'd5 },
{4'd5, 4'd6 }: valid_cl = 1;
`elsif sg25
{4'd5, 4'd5 },
{4'd5, 4'd6 }: valid_cl = 1;
`endif
default : valid_cl = 0;
endcase
endfunction
// find the minimum valid cas write latency
function [3:0] min_cwl;
input period;
real period;
min_cwl = (period >= 2500.0) ? 5:
(period >= 1875.0) ? 6:
(period >= 1500.0) ? 7:
(period >= 1250.0) ? 8:
(period >= 1071.0) ? 9:
10; // (period >= 938)
endfunction
// find the minimum valid cas latency
function [3:0] min_cl;
input period;
real period;
reg [3:0] cwl;
reg [3:0] cl;
begin
cwl = min_cwl(period);
for (cl=CL_MAX; cl>=CL_MIN; cl=cl-1) begin
if (valid_cl(cl, cwl)) begin
min_cl = cl;
end
end
end
endfunction
ddr3/4096Mb_ddr3_parameters.vh 0 → 100755
View file @ 105bffcd
/****************************************************************************************
*
* Disclaimer This software code and all associated documentation, comments or other
* of Warranty: information (collectively "Software") is provided "AS IS" without
* warranty of any kind. MICRON TECHNOLOGY, INC. ("MTI") EXPRESSLY
* DISCLAIMS ALL WARRANTIES EXPRESS OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO, NONINFRINGEMENT OF THIRD PARTY RIGHTS, AND ANY IMPLIED WARRANTIES
* OF MERCHANTABILITY OR FITNESS FOR ANY PARTICULAR PURPOSE. MTI DOES NOT
* WARRANT THAT THE SOFTWARE WILL MEET YOUR REQUIREMENTS, OR THAT THE
* OPERATION OF THE SOFTWARE WILL BE UNINTERRUPTED OR ERROR-FREE.
* FURTHERMORE, MTI DOES NOT MAKE ANY REPRESENTATIONS REGARDING THE USE OR
* THE RESULTS OF THE USE OF THE SOFTWARE IN TERMS OF ITS CORRECTNESS,
* ACCURACY, RELIABILITY, OR OTHERWISE. THE ENTIRE RISK ARISING OUT OF USE
* OR PERFORMANCE OF THE SOFTWARE REMAINS WITH YOU. IN NO EVENT SHALL MTI,
* ITS AFFILIATED COMPANIES OR THEIR SUPPLIERS BE LIABLE FOR ANY DIRECT,
* INDIRECT, CONSEQUENTIAL, INCIDENTAL, OR SPECIAL DAMAGES (INCLUDING,
* WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS INTERRUPTION,
* OR LOSS OF INFORMATION) ARISING OUT OF YOUR USE OF OR INABILITY TO USE
* THE SOFTWARE, EVEN IF MTI HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH
* DAMAGES. Because some jurisdictions prohibit the exclusion or
* limitation of liability for consequential or incidental damages, the
* above limitation may not apply to you.
*
* Copyright 2003 Micron Technology, Inc. All rights reserved.
*
****************************************************************************************/
// Timing parameters based on 4Gb_DDR3_SDRAM.pdf - Rev. L 2/13 EN
// SYMBOL UNITS DESCRIPTION
// ------ ----- -----------
`ifdef sg093 // sg093 is equivalent to the JEDEC DDR3-2133 (14-14-14) speed bin
parameter TCK_MIN = 938; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 50; // tJIT(per) ps Period JItter
parameter TJIT_CC = 100; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 74; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 87; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 97; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 105; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 111; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 116; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 121; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 125; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 128; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 132; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 134; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 5; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 20; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 70; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.27; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.18; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.18; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 180; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 280; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 470; // tIPW ps Control and Address input Pulse Width
parameter TIS = 35; // tIS ps Input Setup Time
parameter TIH = 75; // tIH ps Input Hold Time
parameter TRAS_MIN = 33000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 46130; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13090; // tRCD ps Active to Read/Write command time
parameter TRP = 13090; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5000; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 180; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 122; // tWLS ps Setup time for tDQS flop
parameter TWLH = 122; // tWLH ps Hold time of tDQS flop
parameter TWLO = 7500; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13090; // TAA ps Internal READ command to first data
parameter CL_TIME = 13090; // CL ps Minimum CAS Latency
`elsif sg107 // sg107 is equivalent to the JEDEC DDR3-1866 (13-13-13) speed bin
parameter TCK_MIN = 1071; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 60; // tJIT(per) ps Period JItter
parameter TJIT_CC = 120; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 88; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 105; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 117; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 126; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 133; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 139; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 145; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 150; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 154; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 158; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 161; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 10; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 20; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 80; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.27; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.18; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.18; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 200; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 320; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 535; // tIPW ps Control and Address input Pulse Width
parameter TIS = 50; // tIS ps Input Setup Time
parameter TIH = 100; // tIH ps Input Hold Time
parameter TRAS_MIN = 34000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 47910; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13910; // tRCD ps Active to Read/Write command time
parameter TRP = 13910; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5000; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 200; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 140; // tWLS ps Setup time for tDQS flop
parameter TWLH = 140; // tWLH ps Hold time of tDQS flop
parameter TWLO = 7500; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13910; // TAA ps Internal READ command to first data
parameter CL_TIME = 13910; // CL ps Minimum CAS Latency
`elsif sg125 // sg125 is equivalent to the JEDEC DDR3-1600 (11-11-11) speed bin
parameter TCK_MIN = 1250; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 70; // tJIT(per) ps Period JItter
parameter TJIT_CC = 140; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 103; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 122; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 136; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 147; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 155; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 163; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 169; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 175; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 180; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 184; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 188; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 10; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 45; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 100; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.27; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.18; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.18; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 225; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 360; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 560; // tIPW ps Control and Address input Pulse Width
parameter TIS = 170; // tIS ps Input Setup Time
parameter TIH = 120; // tIH ps Input Hold Time
parameter TRAS_MIN = 35000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 48750; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13750; // tRCD ps Active to Read/Write command time
parameter TRP = 13750; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5000; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 250; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 165; // tWLS ps Setup time for tDQS flop
parameter TWLH = 165; // tWLH ps Hold time of tDQS flop
parameter TWLO = 7500; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13750; // TAA ps Internal READ command to first data
parameter CL_TIME = 13750; // CL ps Minimum CAS Latency
`elsif sg15E // sg15E is equivalent to the JEDEC DDR3-1333H (9-9-9) speed bin
parameter TCK_MIN = 1500; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 80; // tJIT(per) ps Period JItter
parameter TJIT_CC = 160; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 118; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 140; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 155; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 168; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 177; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 186; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 193; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 200; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 205; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 210; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 215; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 30; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 65; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 125; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 255; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 400; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 620; // tIPW ps Control and Address input Pulse Width
parameter TIS = 190; // tIS ps Input Setup Time
parameter TIH = 140; // tIH ps Input Hold Time
parameter TRAS_MIN = 36000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 49500; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13500; // tRCD ps Active to Read/Write command time
parameter TRP = 13500; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5625; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 250; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 195; // tWLS ps Setup time for tDQS flop
parameter TWLH = 195; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13500; // TAA ps Internal READ command to first data
parameter CL_TIME = 13500; // CL ps Minimum CAS Latency
`elsif sg15 // sg15 is equivalent to the JEDEC DDR3-1333J (10-10-10) speed bin
parameter TCK_MIN = 1500; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 80; // tJIT(per) ps Period JItter
parameter TJIT_CC = 160; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 118; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 140; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 155; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 168; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 177; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 186; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 193; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 200; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 205; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 210; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 215; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 30; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 65; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 125; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 255; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 400; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 620; // tIPW ps Control and Address input Pulse Width
parameter TIS = 190; // tIS ps Input Setup Time
parameter TIH = 140; // tIH ps Input Hold Time
parameter TRAS_MIN = 36000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 51000; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 15000; // tRCD ps Active to Read/Write command time
parameter TRP = 15000; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5625; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 250; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 195; // tWLS ps Setup time for tDQS flop
parameter TWLH = 195; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 15000; // TAA ps Internal READ command to first data
parameter CL_TIME = 15000; // CL ps Minimum CAS Latency
`elsif sg187E // sg187E is equivalent to the JEDEC DDR3-1066F (7-7-7) speed bin
parameter TCK_MIN = 1875; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 90; // tJIT(per) ps Period JItter
parameter TJIT_CC = 180; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 132; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 157; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 175; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 188; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 200; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 209; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 217; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 224; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 231; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 237; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 242; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 75; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 100; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 150; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 300; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.38; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.38; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 490; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 780; // tIPW ps Control and Address input Pulse Width
parameter TIS = 275; // tIS ps Input Setup Time
parameter TIH = 200; // tIH ps Input Hold Time
parameter TRAS_MIN = 37500; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 50625; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13125; // tRCD ps Active to Read/Write command time
parameter TRP = 13125; // tRP ps Precharge command period
parameter TXP = 7500; // tXP ps Exit power down to a valid command
parameter TCKE = 5625; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 300; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 245; // tWLS ps Setup time for tDQS flop
parameter TWLH = 245; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13125; // TAA ps Internal READ command to first data
parameter CL_TIME = 13125; // CL ps Minimum CAS Latency
`elsif sg187 // sg187 is equivalent to the JEDEC DDR3-1066G (8-8-8) speed bin
parameter TCK_MIN = 1875; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 90; // tJIT(per) ps Period JItter
parameter TJIT_CC = 180; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 132; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 157; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 175; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 188; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 200; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 209; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 217; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 224; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 231; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 237; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 242; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 75; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 100; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 150; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 300; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.38; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.38; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 490; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 780; // tIPW ps Control and Address input Pulse Width
parameter TIS = 275; // tIS ps Input Setup Time
parameter TIH = 200; // tIH ps Input Hold Time
parameter TRAS_MIN = 37500; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 52500; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 15000; // tRCD ps Active to Read/Write command time
parameter TRP = 15000; // tRP ps Precharge command period
parameter TXP = 7500; // tXP ps Exit power down to a valid command
parameter TCKE = 5625; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 300; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 245; // tWLS ps Setup time for tDQS flop
parameter TWLH = 245; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 15000; // TAA ps Internal READ command to first data
parameter CL_TIME = 15000; // CL ps Minimum CAS Latency
`elsif sg25E // sg25E is equivalent to the JEDEC DDR3-800D (5-5-5) speed bin
parameter TCK_MIN = 2500; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 100; // tJIT(per) ps Period JItter
parameter TJIT_CC = 200; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 147; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 175; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 194; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 209; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 222; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 232; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 241; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 249; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 257; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 263; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 269; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 125; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 150; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 200; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 400; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.38; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.38; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 600; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 900; // tIPW ps Control and Address input Pulse Width
parameter TIS = 350; // tIS ps Input Setup Time
parameter TIH = 275; // tIH ps Input Hold Time
parameter TRAS_MIN = 37500; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 50000; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 12500; // tRCD ps Active to Read/Write command time
parameter TRP = 12500; // tRP ps Precharge command period
parameter TXP = 7500; // tXP ps Exit power down to a valid command
parameter TCKE = 7500; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 400; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 325; // tWLS ps Setup time for tDQS flop
parameter TWLH = 325; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 12500; // TAA ps Internal READ command to first data
parameter CL_TIME = 12500; // CL ps Minimum CAS Latency
`else
`define sg25 // sg25 is equivalent to the JEDEC DDR3-800E (6-6-6) speed bin
parameter TCK_MIN = 2500; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 100; // tJIT(per) ps Period JItter
parameter TJIT_CC = 200; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 147; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 175; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 194; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 209; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 222; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 232; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 241; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 249; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 257; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 263; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 269; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 125; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 150; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 200; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 400; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.38; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.38; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 600; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 900; // tIPW ps Control and Address input Pulse Width
parameter TIS = 350; // tIS ps Input Setup Time
parameter TIH = 275; // tIH ps Input Hold Time
parameter TRAS_MIN = 37500; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 52500; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 15000; // tRCD ps Active to Read/Write command time
parameter TRP = 15000; // tRP ps Precharge command period
parameter TXP = 7500; // tXP ps Exit power down to a valid command
parameter TCKE = 7500; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 400; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 325; // tWLS ps Setup time for tDQS flop
parameter TWLH = 325; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 15000; // TAA ps Internal READ command to first data
parameter CL_TIME = 15000; // CL ps Minimum CAS Latency
`endif
parameter TDQSCK_DLLDIS = TDQSCK; // tDQSCK ps for DLLDIS mode, timing not guaranteed
`ifdef x16
`ifdef sg093
parameter TRRD = 6000; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 35000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg107
parameter TRRD = 6000; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 35000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg125
parameter TRRD = 7500; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 40000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg15E
parameter TRRD = 7500; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 45000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg15
parameter TRRD = 7500; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 45000; // tFAW ps (2KB page size) Four Bank Activate window
`else // sg187E, sg187, sg25, sg25E
parameter TRRD = 10000; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 50000; // tFAW ps (2KB page size) Four Bank Activate window
`endif
`else // x4, x8
`ifdef sg093
parameter TRRD = 5000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 25000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg107
parameter TRRD = 5000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 25000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg125
parameter TRRD = 6000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 30000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg15E
parameter TRRD = 6000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 30000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg15
parameter TRRD = 6000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 30000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg187E
parameter TRRD = 7500; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 37500; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg187
parameter TRRD = 7500; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 37500; // tFAW ps (1KB page size) Four Bank Activate window
`else // sg25, sg25E
parameter TRRD = 10000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 40000; // tFAW ps (1KB page size) Four Bank Activate window
`endif
`endif
// Timing Parameters
// Mode Register
parameter CL_MIN = 5; // CL tCK Minimum CAS Latency
parameter CL_MAX = 14; // CL tCK Maximum CAS Latency
parameter AL_MIN = 0; // AL tCK Minimum Additive Latency
parameter AL_MAX = 2; // AL tCK Maximum Additive Latency
parameter WR_MIN = 5; // WR tCK Minimum Write Recovery
parameter WR_MAX = 16; // WR tCK Maximum Write Recovery
parameter BL_MIN = 4; // BL tCK Minimum Burst Length
parameter BL_MAX = 8; // BL tCK Minimum Burst Length
parameter CWL_MIN = 5; // CWL tCK Minimum CAS Write Latency
parameter CWL_MAX = 10; // CWL tCK Maximum CAS Write Latency
// Clock
parameter TCK_MAX = 3300; // tCK ps Maximum Clock Cycle Time
parameter TCH_AVG_MIN = 0.47; // tCH tCK Minimum Clock High-Level Pulse Width
parameter TCL_AVG_MIN = 0.47; // tCL tCK Minimum Clock Low-Level Pulse Width
parameter TCH_AVG_MAX = 0.53; // tCH tCK Maximum Clock High-Level Pulse Width
parameter TCL_AVG_MAX = 0.53; // tCL tCK Maximum Clock Low-Level Pulse Width
parameter TCH_ABS_MIN = 0.43; // tCH tCK Minimum Clock High-Level Pulse Width
parameter TCL_ABS_MIN = 0.43; // tCL tCK Maximum Clock Low-Level Pulse Width
parameter TCKE_TCK = 3; // tCKE tCK CKE minimum high or low pulse width
parameter TAA_MAX = 20000; // TAA ps Internal READ command to first data
// Data OUT
parameter TQH = 0.38; // tQH ps DQ output hold time from DQS, DQS#
// Data Strobe OUT
parameter TRPRE = 0.90; // tRPRE tCK DQS Read Preamble
parameter TRPST = 0.30; // tRPST tCK DQS Read Postamble
// Data Strobe IN
parameter TDQSH = 0.45; // tDQSH tCK DQS input High Pulse Width
parameter TDQSL = 0.45; // tDQSL tCK DQS input Low Pulse Width
parameter TWPRE = 0.90; // tWPRE tCK DQS Write Preamble
parameter TWPST = 0.30; // tWPST tCK DQS Write Postamble
// Command and Address
integer TZQCS = max( 64, ceil( 80000/TCK_MIN)); // tZQCS tCK ZQ Cal (Short) time
integer TZQINIT = max(512, ceil(640000/TCK_MIN)); // tZQinit tCK ZQ Cal (Long) time
integer TZQOPER = max(256, ceil(320000/TCK_MIN)); // tZQoper tCK ZQ Cal (Long) time
parameter TCCD = 4; // tCCD tCK Cas to Cas command delay
parameter TCCD_DG = 2; // tCCD_DG tCK Cas to Cas command delay to different group
parameter TRAS_MAX = 60e9; // tRAS ps Maximum Active to Precharge command time
parameter TWR = 15000; // tWR ps Write recovery time
parameter TMRD = 4; // tMRD tCK Load Mode Register command cycle time
parameter TMOD = 15000; // tMOD ps LOAD MODE to non-LOAD MODE command cycle time
parameter TMOD_TCK = 12; // tMOD tCK LOAD MODE to non-LOAD MODE command cycle time
parameter TRRD_TCK = 4; // tRRD tCK Active bank a to Active bank b command time
parameter TRRD_DG = 3000; // tRRD_DG ps Active bank a to Active bank b command time to different group
parameter TRRD_DG_TCK = 2; // tRRD_DG tCK Active bank a to Active bank b command time to different group
parameter TRTP = 7500; // tRTP ps Read to Precharge command delay
parameter TRTP_TCK = 4; // tRTP tCK Read to Precharge command delay
parameter TWTR = 7500; // tWTR ps Write to Read command delay
parameter TWTR_DG = 3750; // tWTR_DG ps Write to Read command delay to different group
parameter TWTR_TCK = 4; // tWTR tCK Write to Read command delay
parameter TWTR_DG_TCK = 2; // tWTR_DG tCK Write to Read command delay to different group
parameter TDLLK = 512; // tDLLK tCK DLL locking time
// Refresh - 4Gb
parameter TRFC_MIN = 260000; // tRFC ps Refresh to Refresh Command interval minimum value
parameter TRFC_MAX =70200000; // tRFC ps Refresh to Refresh Command Interval maximum value
// Power Down
parameter TXP_TCK = 3; // tXP tCK Exit power down to a valid command
parameter TXPDLL = 24000; // tXPDLL ps Exit precharge power down to READ or WRITE command (DLL-off mode)
parameter TXPDLL_TCK = 10; // tXPDLL tCK Exit precharge power down to READ or WRITE command (DLL-off mode)
parameter TACTPDEN = 1; // tACTPDEN tCK Timing of last ACT command to power down entry
parameter TPRPDEN = 1; // tPREPDEN tCK Timing of last PRE command to power down entry
parameter TREFPDEN = 1; // tARPDEN tCK Timing of last REFRESH command to power down entry
parameter TCPDED = 1; // tCPDED tCK Command pass disable/enable delay
parameter TPD_MAX =TRFC_MAX; // tPD ps Power-down entry-to-exit timing
parameter TXPR = 270000; // tXPR ps Exit Reset from CKE assertion to a valid command
parameter TXPR_TCK = 5; // tXPR tCK Exit Reset from CKE assertion to a valid command
// Self Refresh
parameter TXS = 270000; // tXS ps Exit self refesh to a non-read or write command
parameter TXS_TCK = 5; // tXS tCK Exit self refesh to a non-read or write command
parameter TXSDLL = TDLLK; // tXSRD tCK Exit self refresh to a read or write command
parameter TISXR = TIS; // tISXR ps CKE setup time during self refresh exit.
parameter TCKSRE = 10000; // tCKSRE ps Valid Clock requirement after self refresh entry (SRE)
parameter TCKSRE_TCK = 5; // tCKSRE tCK Valid Clock requirement after self refresh entry (SRE)
parameter TCKSRX = 10000; // tCKSRX ps Valid Clock requirement prior to self refresh exit (SRX)
parameter TCKSRX_TCK = 5; // tCKSRX tCK Valid Clock requirement prior to self refresh exit (SRX)
parameter TCKESR_TCK = 4; // tCKESR tCK Minimum CKE low width for Self Refresh entry to exit timing
// ODT
parameter TAOF = 0.7; // tAOF tCK RTT turn-off from ODTLoff reference
parameter TAONPD = 8500; // tAONPD ps Asynchronous RTT turn-on delay (Power-Down with DLL frozen)
parameter TAOFPD = 8500; // tAONPD ps Asynchronous RTT turn-off delay (Power-Down with DLL frozen)
parameter ODTH4 = 4; // ODTH4 tCK ODT minimum HIGH time after ODT assertion or write (BL4)
parameter ODTH8 = 6; // ODTH8 tCK ODT minimum HIGH time after write (BL8)
parameter TADC = 0.7; // tADC tCK RTT dynamic change skew
// Write Levelization
parameter TWLMRD = 40; // tWLMRD tCK First DQS pulse rising edge after tDQSS margining mode is programmed
parameter TWLDQSEN = 25; // tWLDQSEN tCK DQS/DQS delay after tDQSS margining mode is programmed
parameter TWLOE = 2000; // tWLOE ps Write levelization output error
// Size Parameters based on Part Width
`ifdef x4
parameter DM_BITS = 1; // Set this parameter to control how many Data Mask bits are used
parameter ADDR_BITS = 16; // MAX Address Bits
parameter ROW_BITS = 16; // Set this parameter to control how many Address bits are used
parameter COL_BITS = 11; // Set this parameter to control how many Column bits are used
parameter DQ_BITS = 4; // Set this parameter to control how many Data bits are used **Same as part bit width**
parameter DQS_BITS = 1; // Set this parameter to control how many Dqs bits are used
`elsif x8
parameter DM_BITS = 1; // Set this parameter to control how many Data Mask bits are used
parameter ADDR_BITS = 16; // MAX Address Bits
parameter ROW_BITS = 16; // Set this parameter to control how many Address bits are used
parameter COL_BITS = 10; // Set this parameter to control how many Column bits are used
parameter DQ_BITS = 8; // Set this parameter to control how many Data bits are used **Same as part bit width**
parameter DQS_BITS = 1; // Set this parameter to control how many Dqs bits are used
`else
`define x16
parameter DM_BITS = 2; // Set this parameter to control how many Data Mask bits are used
parameter ADDR_BITS = 15; // MAX Address Bits
parameter ROW_BITS = 15; // Set this parameter to control how many Address bits are used
parameter COL_BITS = 10; // Set this parameter to control how many Column bits are used
parameter DQ_BITS = 16; // Set this parameter to control how many Data bits are used **Same as part bit width**
parameter DQS_BITS = 2; // Set this parameter to control how many Dqs bits are used
`endif
// Size Parameters
parameter BA_BITS = 3; // Set this parmaeter to control how many Bank Address bits are used
parameter MEM_BITS = 10; // Set this parameter to control how many write data bursts can be stored in memory. The default is 2^10=1024.
parameter AP = 10; // the address bit that controls auto-precharge and precharge-all
parameter BC = 12; // the address bit that controls burst chop
parameter BL_BITS = 3; // the number of bits required to count to BL_MAX
parameter BO_BITS = 2; // the number of Burst Order Bits
`ifdef QUAD_RANK
parameter CS_BITS = 4; // Number of Chip Select Bits
parameter RANKS = 4; // Number of Chip Selects
`elsif DUAL_RANK
parameter CS_BITS = 2; // Number of Chip Select Bits
parameter RANKS = 2; // Number of Chip Selects
`else
parameter CS_BITS = 1; // Number of Chip Select Bits
parameter RANKS = 1; // Number of Chip Selects
`endif
// Simulation parameters
parameter RZQ = 240; // termination resistance
parameter PRE_DEF_PAT = 8'hAA; // value returned during mpr pre-defined pattern readout
parameter STOP_ON_ERROR = 1; // If set to 1, the model will halt on command sequence/major errors
parameter DEBUG = 1; // Turn on Debug messages
parameter BUS_DELAY = 0; // delay in nanoseconds
parameter RANDOM_OUT_DELAY = 0; // If set to 1, the model will put a random amount of delay on DQ/DQS during reads
parameter RANDOM_SEED = 31913; //seed value for random generator.
parameter RDQSEN_PRE = 2; // DQS driving time prior to first read strobe
parameter RDQSEN_PST = 1; // DQS driving time after last read strobe
parameter RDQS_PRE = 2; // DQS low time prior to first read strobe
parameter RDQS_PST = 1; // DQS low time after last read strobe
parameter RDQEN_PRE = 0; // DQ/DM driving time prior to first read data
parameter RDQEN_PST = 0; // DQ/DM driving time after last read data
parameter WDQS_PRE = 2; // DQS half clock periods prior to first write strobe
parameter WDQS_PST = 1; // DQS half clock periods after last write strobe
// check for legal cas latency based on the cas write latency
function valid_cl;
input [3:0] cl;
input [3:0] cwl;
case ({cwl, cl})
`ifdef sg093
{4'd5 , 4'd5 },
{4'd5 , 4'd6 },
{4'd6 , 4'd7 },
{4'd6 , 4'd8 },
{4'd7 , 4'd9 },
{4'd7 , 4'd10},
{4'd8 , 4'd11},
{4'd9 , 4'd13},
{4'd10, 4'd14}: valid_cl = 1;
`elsif sg107
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 },
{4'd7, 4'd9 },
{4'd7, 4'd10},
{4'd8, 4'd11},
{4'd9, 4'd13}: valid_cl = 1;
`elsif sg125
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 },
{4'd7, 4'd9 },
{4'd7, 4'd10},
{4'd8, 4'd11}: valid_cl = 1;
`elsif sg15E
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 },
{4'd7, 4'd9 },
{4'd7, 4'd10}: valid_cl = 1;
`elsif sg15
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd8 },
{4'd7, 4'd10}: valid_cl = 1;
`elsif sg187E
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 }: valid_cl = 1;
`elsif sg187
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd8 }: valid_cl = 1;
`elsif sg25E
{4'd5, 4'd5 },
{4'd5, 4'd6 }: valid_cl = 1;
`elsif sg25
{4'd5, 4'd5 },
{4'd5, 4'd6 }: valid_cl = 1;
`endif
default : valid_cl = 0;
endcase
endfunction
// find the minimum valid cas write latency
function [3:0] min_cwl;
input period;
real period;
min_cwl = (period >= 2500.0) ? 5:
(period >= 1875.0) ? 6:
(period >= 1500.0) ? 7:
(period >= 1250.0) ? 8:
(period >= 1071.0) ? 9:
10; // (period >= 938)
endfunction
// find the minimum valid cas latency
function [3:0] min_cl;
input period;
real period;
reg [3:0] cwl;
reg [3:0] cl;
begin
cwl = min_cwl(period);
for (cl=CL_MAX; cl>=CL_MIN; cl=cl-1) begin
if (valid_cl(cl, cwl)) begin
min_cl = cl;
end
end
end
endfunction
ddr3/ddr3.v 0 → 100755
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ddr3/readme.txt 0 → 100755
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Disclaimer of Warranty:
-----------------------
This software code and all associated documentation, comments or other
information (collectively "Software") is provided "AS IS" without
warranty of any kind. MICRON TECHNOLOGY, INC. ("MTI") EXPRESSLY
DISCLAIMS ALL WARRANTIES EXPRESS OR IMPLIED, INCLUDING BUT NOT LIMITED
TO, NONINFRINGEMENT OF THIRD PARTY RIGHTS, AND ANY IMPLIED WARRANTIES
OF MERCHANTABILITY OR FITNESS FOR ANY PARTICULAR PURPOSE. MTI DOES NOT
WARRANT THAT THE SOFTWARE WILL MEET YOUR REQUIREMENTS, OR THAT THE
OPERATION OF THE SOFTWARE WILL BE UNINTERRUPTED OR ERROR-FREE.
FURTHERMORE, MTI DOES NOT MAKE ANY REPRESENTATIONS REGARDING THE USE OR
THE RESULTS OF THE USE OF THE SOFTWARE IN TERMS OF ITS CORRECTNESS,
ACCURACY, RELIABILITY, OR OTHERWISE. THE ENTIRE RISK ARISING OUT OF USE
OR PERFORMANCE OF THE SOFTWARE REMAINS WITH YOU. IN NO EVENT SHALL MTI,
ITS AFFILIATED COMPANIES OR THEIR SUPPLIERS BE LIABLE FOR ANY DIRECT,
INDIRECT, CONSEQUENTIAL, INCIDENTAL, OR SPECIAL DAMAGES (INCLUDING,
WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS INTERRUPTION,
OR LOSS OF INFORMATION) ARISING OUT OF YOUR USE OF OR INABILITY TO USE
THE SOFTWARE, EVEN IF MTI HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH
DAMAGES. Because some jurisdictions prohibit the exclusion or
limitation of liability for consequential or incidental damages, the
above limitation may not apply to you.
Copyright 2003 Micron Technology, Inc. All rights reserved.
Getting Started:
----------------
Unzip the included files to a folder.
Compile ddr3.v and tb.v in a verilog simulator.
Simulate the top level test bench tb.
Or, if you are using the ModelSim simulator, type "do tb.do" at the prompt.
File Descriptions:
------------------
ddr3.v -ddr3 model
ddr3_mcp.v -structural wrapper for ddr3 - multi-chip package model
ddr3_module.v -structural wrapper for ddr3 - module model
1024Mb_ddr3_parameters.vh -file that contains all 1Gb parameters used by the model
2048Mb_ddr3_parameters.vh -file that contains all 2Gb parameters used by the model
4096Mb_ddr3_parameters.vh -file that contains all 4Gb parameters used by the model
readme.txt -this file
tb.v -ddr3 model test bench
subtest.vh -example test included by the test bench.
Defining the Speed Grade:
-------------------------
The verilog compiler directive "`define" may be used to choose between
multiple speed grades supported by the ddr3 model. Allowable speed
grades are listed in the ddr3_parameters.vh file and begin with the
letters "sg". The speed grade is used to select a set of timing
parameters for the ddr3 model. The following are examples of defining
the speed grade.
simulator command line
--------- ------------
ModelSim vlog +define+sg25 ddr3.v
VCS vcs +define+sg25 ddr3.v
NC-Verilog ncverilog +define+sg25 ddr3.v
Defining the Organization:
--------------------------
The verilog compiler directive "`define" may be used to choose between
multiple organizations supported by the ddr3 model. Valid
organizations include "x4", "x8", and x16, and are listed in the
ddr3_parameters.vh file. The organization is used to select the amount
of memory and the port sizes of the ddr3 model. The following are
examples of defining the organization.
simulator command line
--------- ------------
ModelSim vlog +define+x8 ddr3.v
NC-Verilog ncverilog +define+x8 ddr3.v
VCS vcs +define+x8 ddr3.v
All combinations of speed grade and organization are considered valid
by the ddr3 model even though a Micron part may not exist for every
combination.
Allocating Memory:
------------------
An associative array has been implemented to reduce the amount of
static memory allocated by the ddr3 model. Each entry in the
associative array is a burst length of eight in size. The number of
entries in the associative array is controlled by the MEM_BITS
parameter, and is equal to 2^MEM_BITS. For example, if the MEM_BITS
parameter is equal to 10, the associative array will be large enough
to store 1024 writes of burst length 8 to unique addresses. The
following are examples of setting the MEM_BITS parameter to 8.
simulator command line
--------- ------------
ModelSim vsim -GMEM_BITS=8 ddr3
NC-Verilog ncverilog +defparam+ddr3.MEM_BITS=8 ddr3.v
VCS vcs -pvalue+MEM_BITS=8 ddr3.v
It is possible to allocate memory for every address supported by the
ddr3 model by using the verilog compiler directive "`define MAX_MEM".
This procedure will improve simulation performance at the expense of
system memory. The following are examples of allocating memory for
every address.
Simulator command line
--------- ------------
ModelSim vlog +define+MAX_MEM ddr3.v
NC-Verilog ncverilog +define+MAX_MEM ddr3.v
VCS vcs +define+MAX_MEM ddr3.v
**********************************************************************
The following information is provided to assist the modeling engineer
in creating multi-chip package (mcp) models. ddr3_mcp.v is a
structural wrapper that instantiates ddr3 models. This wrapper can be
used to create single, dual, or quad rank mcp models. From the
perspective of the model, the only item that needs to be defined is the
number of ranks.
**********************************************************************
Defining the Number of Ranks in a multi-chip package:
----------------------------------------------------
The verilog compiler directive "`define" may be used to choose between
single, dual, and quad rank mcp configurations. The default is single
rank if nothing is defined. Dual rank configuration can be selected by
defining "DUAL_RANK" when the ddr3_mcp is compiled. Quad rank
configuration can be selected by defining "QUAD_RANK" when the ddr3_mcp
is compiled. The following are examples of defining a dual rank mcp
configuration.
simulator command line
--------- ------------
ModelSim vlog +define+DUAL_RANK ddr3.v ddr3_mcp.v
NC-Verilog ncverilog +define+DUAL_RANK ddr3.v ddr3_mcp.v
VCS vcs +define+DUAL_RANK ddr3.v ddr3_mcp.v
**********************************************************************
The following information is provided to assist the modeling engineer
in creating DIMM models. ddr3_module.v is a structural wrapper that
instantiates ddr3 models. This wrapper can be used to create UDIMM,
RDIMM or SODIMM models. Other form factors are not supported
(MiniDIMM, VLP DIMM, etc.). From the perspective of the model, the
items that need to be defined are the number of ranks, the module
type, and the presence of ECC. All combinations of ranks, module
type, and ECC are considered valid by the ddr3_module model even
though a Micron part may not exist for every combination.
**********************************************************************
Defining the Number of Ranks on a module:
----------------------------------------
The verilog compiler directive "`define" may be used to choose between
single, dual, and quad rank module configurations. The default is single
rank if nothing is defined. Dual rank configuration can be selected by
defining "DUAL_RANK" when the ddr3_module is compiled. Quad rank
configuration can be selected by defining "QUAD_RANK" when the ddr3_module
is compiled. The following are examples of defining a dual rank module
configuration.
simulator command line
--------- ------------
ModelSim vlog +define+DUAL_RANK ddr3.v ddr3_module.v
NC-Verilog ncverilog +define+DUAL_RANK ddr3.v ddr3_module.v
VCS vcs +define+DUAL_RANK ddr3.v ddr3_module.v
Defining the Module Type:
-----------------------------------
The verilog compiler directive "`define" may be used to choose between
UDIMM, RDIMM, and SODIMM module configurations. The default is
unregistered (UDIMM) if nothing is defined. SODIMM configuration can be
selected by defining "SODIMM" when the ddr3_module is compiled. Registered
configuration can be selected by defining "RDIMM" when the ddr3_module is
compiled. The following are examples of defining a registered module
configuration.
simulator command line
--------- ------------
ModelSim vlog +define+RDIMM ddr3.v ddr3_module.v
NC-Verilog ncverilog +define+RDIMM ddr3.v ddr3_module.v
VCS vcs +define+RDIMM ddr3.v ddr3_module.v
Defining the ECC for a module:
-----------------------------
The verilog compiler directive "`define" may be used to choose between
ECC and nonECC module configurations. The default is nonECC if nothing
is defined. ECC configuration can be selected by defining "ECC" when
the ddr3_module is compiled. The following are examples of defining an
ECC module configuration.
simulator command line
--------- ------------
ModelSim vlog +define+ECC ddr3.v ddr3_module.v
NC-Verilog ncverilog +define+ECC ddr3.v ddr3_module.v
VCS vcs +define+ECC ddr3.v ddr3_module.v
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