#define CONFIG_EZYNQ_DDR_DS_T_RFC 300.0 /* Minimal Refresh-to-Activate or Refresh command period (ns) */
#define CONFIG_EZYNQ_DDR_DS_T_WR 15.0 /* Write recovery time (ns) */
#define CONFIG_EZYNQ_DDR_DS_T_REFI_US 7.8 /* Maximal average periodic refresh, microseconds. Will be automatically reduced if high temperature option is selected */
#define CONFIG_EZYNQ_DDR_DS_RTP 4 /* Minimal Read-to-Precharge time (in tCK). Will use max of this and CONFIG_EZYNQ_DDR_DS_T_RTP/tCK */
#define CONFIG_EZYNQ_DDR_DS_T_RTP 7.5 /* Minimal Read-to-Precharge time (ns). Will use max of this divided by tCK and CONFIG_EZYNQ_DDR_DS_RTP */
#define CONFIG_EZYNQ_DDR_DS_WTR 4 /* Minimal Write-to-Read time (in tCK). Will use max of this and CONFIG_EZYNQ_DDR_DS_T_WTR/tCK */
#define CONFIG_EZYNQ_DDR_DS_T_WTR 7.5 /* Minimal Write-to-Read time (ns). Will use max of this divided by tCK and CONFIG_EZYNQ_DDR_DS_WTR */
#define CONFIG_EZYNQ_DDR_DS_XP 4 /* Minimal time from power down (DLL on) to any operation (in tCK) */
#define CONFIG_EZYNQ_DDR_DS_T_DQSCK_MAX 5.5 /* LPDDR2 only. DQS output access time from CK (ns). Used for LPDDR2 */
#define CONFIG_EZYNQ_DDR_DS_CCD 5 /* DESCRIPTION':'CAS-to-CAS command delay (in tCK) (4 in Micron DS) */
#define CONFIG_EZYNQ_DDR_DS_RRD 6 /* ACTIVATE-to-ACTIVATE minimal command period (in tCK) */
#define CONFIG_EZYNQ_DDR_DS_T_RRD 10.0 /* ACTIVATE-to-ACTIVATE minimal command period (ns). May be used to calculate CONFIG_EZYNQ_DDR_DS_RRD automatically */
#define CONFIG_EZYNQ_DDR_DS_MRD 4 /* MODE REGISTER SET command period (in tCK) */
#define CONFIG_EZYNQ_DDR_DS_MOD 12 /* MODE REGISTER SET update delay (in tCK) */